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a2t18s260--12sr3 1 rf device data nxp semiconductors rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 50 w rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 mhz. 1800 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1400 ma, p out = 50 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 1805 mhz 18.9 30.1 7.7 ?35.8 ?17 1840 mhz 19.3 30.0 7.6 ?36.5 ?19 1880 mhz 19.2 30.3 7.5 ?36.8 ?9 1900 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1400 ma, p out = 50 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 1930 mhz 19.1 29.2 7.6 ?35.1 ?23 1960 mhz 19.4 29.9 7.6 ?36.0 ?15 1995 mhz 19.6 31.0 7.4 ?35.7 ?10 features ? greater negative gate--source volt age range for improved class c operation ? designed for digital predistorti on error corre ction systems ? optimized for doherty applications document number: a2t18s260--12s rev. 0, 9/2016 nxp semiconductors technical data 1805?1995 mhz, 50 w avg., 28 v airfast rf power ldmos transistor a2t18s260--12sr3 figure 1. pin connections ni--780s--2l2l (top view) rf in /v gs vbw (1) vbw (1) 4 2 13 rf out /v ds 1. device cannot operate with v dd current supplied through pin 2 and pin 4. ? 2016 nxp b.v.
2 rf device data nxp semiconductors a2t18s260--12sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 89 ? c, 50 w cw, 28 vdc, i dq = 1400 ma, 1840 mhz r ? jc 0.36 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 270 ? adc) v gs(th) 1.4 1.8 2.2 vdc gate quiescent voltage (v dd =28vdc,i d = 1400 madc, measured in functional test) v gs(q) 2.1 2.5 2.9 vdc drain--source on--voltage (v gs =10vdc,i d =2.7adc) v ds(on) 0.05 0.15 0.25 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. (continued)
a2t18s260--12sr3 3 rf device data nxp semiconductors table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 50 w avg., f = 1805 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 17.6 18.9 20.6 db drain efficiency ? d 27.5 30.1 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.3 7.7 ? db adjacent channel power ratio acpr ? ?35.8 ?32 dbc input return loss irl ? ?17 ?8 db load mismatch (in nxp test fixture, 50 ohm system) i dq = 1400 ma, f = 1840 mhz, 12 ? sec(on), 10% duty cycle vswr 10:1 at 32 vdc, 416 w pulsed cw output power (3 db input overdrive from 250 w pulsed cw rated power) no device degradation typical performance (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 1805?1880 mhz bandwidth p out @ 1 db compression point, cw p1db ? 257 ? w p out @ 3 db compression point (2) p3db ? 323 ? w am/pm (maximum value measured at the p3db compression point across the 1805--1880 mhz bandwidth) ? ? ?17.4 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 85 ? mhz gain flatness in 75 mhz bandwidth @ p out =50wavg. g f ? 0.2 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.011 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.008 ? db/ ? c table 5. ordering information device tape and reel information package a2t18s260--12sr3 r3 suffix = 250 units, 44 mm tape width, 13--inch reel ni--780s--2l2l 1. part internally matched both on input and output. 2. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data nxp semiconductors a2t18s260--12sr3 figure 2. a2t18s260--12sr3 test circuit component layout a2t18s260--12s/n d65232 c1 c2 c3 c4 c5 c6 c7 c11 c10 c9 c15 c16 c8 c12 c13 c14 c17 c18 c19 r1 r2 -- rev. 0 cut out area v gg v gg v dd v dd table 6. a2t18s260--12sr3 test circuit component designations and values part description part number manufacturer c1 5.1 pf chip capacitor atc600f5r1bt250t atc c2, c3 1.1 pf chip capacitors atc600f1r1bt250t atc c4 0.7 pf chip capacitor atc600f0r7bt250t atc c5, c6, c13, c14, c16 15 pf chip capacitors atc600f150ft250t atc c7, c8, c9, c10, c11, c12 10 f chip capacitors c5750x7s2a106m230kb tdk c15 0.5 pf chip capacitor atc600f0r5bt250t atc c17 0.2 pf chip capacitor atc600f0r2bt250t atc c18, c19 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp r1, r2 3.9 ? , 1/4 w chip resistors crcw12063r90fkea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.66 d65232 mtl
a2t18s260--12sr3 5 rf device data nxp semiconductors typical characteris tics ? 1805?1880 mhz 1760 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. 18 20 19.8 19.6 ?37.5 32 31.5 31 30.5 ?35 ?35.5 ?36 ?36.5 ? d , drain efficiency (%) ? d g ps , power gain (db) 19.4 19.2 19 18.8 18.6 18.4 18.2 1780 1800 1820 1840 1860 1880 1900 1920 30 ?37 acpr (dbc) parc figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?60 ?20 ?30 ?50 1 100 imd, intermodulatio n distortion (dbc) ?40 im5--u im5--l im7--l im7--u figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 30 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 10 50 70 110 0 60 50 40 30 20 10 ? d ? drain efficiency (%) ?1 db = 32 w 90 ? d acpr parc acpr (dbc) ?60 0 ?10 ?20 ?40 ?30 ?50 20.5 g ps , power gain (db) 20 19.5 19 18.5 18 17.5 g ps ?3 db = 64 w ?2 db = 48 w parc (db) ?2.5 ?2.1 ?2.2 ?2.3 ?2.6 ?5 g ps input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf im3--l 1 v dd =28vdc,i dq = 1400 ma, f = 1840 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth ?2.4 200 im3--u v dd =28vdc,p out = 85 w (pep), i dq = 1400 ma two--tone measurements (f1 + f2)/2 = center frequency of 1840 mhz input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf irl, input return loss (db) ?25 ?5 ?10 ?15 ?30 ?20 irl v dd =28vdc,p out =50w(avg.),i dq = 1400 ma single--carrier w--cdma 3.84 mhz channel bandwidth ?10
6 rf device data nxp semiconductors a2t18s260--12sr3 typical characteris tics ? 1805?1880 mhz 1 acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?20 ?30 12 24 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 22 20 10 100 300 10 acpr (dbc) 18 16 14 ?10 ?40 ?50 ?60 figure 7. broadband frequency response 9 27 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 21 18 15 gain (db) 24 12 1600 1700 1800 1900 2000 2100 2200 2300 2400 gain 1805 mhz 1880 mhz 1880 mhz 1840 mhz 0 input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf 1840 mhz 1805 mhz 1840 mhz 1880 mhz v dd =28vdc,i dq = 1400 ma single--carrier w--cdma 3.84 mhz channel bandwidth 1805 mhz ?20 irl (db) ?15 ?10 ?5 0 5 10 irl g ps
a2t18s260--12sr3 7 rf device data nxp semiconductors table 7. load pull performance ? maximum power tuning v dd =28vdc,i dq = 1390 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.74 ? j2.37 0.61 + j2.21 1.14 ? j2.05 19.1 54.6 291 56.1 ?13 1840 0.85 ? j2.48 0.77 + j2.39 1.15 ? j2.10 19.4 54.6 287 56.4 ?14 1880 1.15 ? j2.87 1.06 + j2.71 1.14 ? j2.34 19.3 54.7 293 57.0 ?15 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.74 ? j2.37 0.57 + j2.27 1.19 ? j2.21 17.0 55.5 357 59.9 ?17 1840 0.85 ? j2.48 0.74 + j2.46 1.18 ? j2.37 17.0 55.4 350 58.6 ?18 1880 1.15 ? j2.87 1.03 + j2.82 1.21 ? j2.54 17.1 55.5 356 59.5 ?20 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. load pull performance ? maximum efficiency tuning v dd =28vdc,i dq = 1390 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.74 ? j2.37 0.65 + j2.31 2.76 ? j0.95 21.9 52.5 178 67.3 ?17 1840 0.85 ? j2.48 0.80 + j2.46 1.98 ? j1.36 21.5 53.3 216 65.2 ?18 1880 1.15 ? j2.87 1.12 + j2.80 1.90 ? j1.31 21.7 53.2 207 67.3 ?19 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 0.74 ? j2.37 0.61 + j2.32 2.43 ? j1.67 19.2 54.2 265 70.2 ?21 1840 0.85 ? j2.48 0.79 + j2.51 2.28 ? j1.49 19.4 54.0 250 68.9 ?24 1880 1.15 ? j2.87 1.07 + j2.86 1.94 ? j1.72 19.2 54.5 279 70.6 ?24 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data nxp semiconductors a2t18s260--12sr3 p1db -- typical load pull contours ? 1840 mhz ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) imaginary ( ? ) ?3 1 ?1 imaginary ( ? ) 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 figure 8. p1db load pull output power contours (dbm) real ( ? ) p e 3.5 ?0.5 0 imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power 53.5 53 52 52.5 50.5 54 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) 51 0.5 51.5 54.5 45 4.5 ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 p e 64 58 50 52 56 54 62 60 p e 19 20 23 19.5 20.5 21.5 21 22 22.5 p e ?28 ?24 ?26 ?22 ?20 ?16 ?18 ?14
a2t18s260--12sr3 9 rf device data nxp semiconductors p3db ? typical load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) figure 15. p3db load pull am/pm contours ( ? ) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) real ( ? ) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) p e 53.5 53 52.5 54 52 51.5 54.5 55 p e 64 68 60 66 58 56 62 52 58 56 p e 19.5 17.5 18.5 19 18 20 20.5 16.5 17 p e ?32 ?30 ?28 ?26 ?24 ?22 ?20 ?18
10 rf device data nxp semiconductors a2t18s260--12sr3 a2t18s260--12s/n d65232 c1 c2 c3 c5 c6 c7 c11 c10 c9 c4 c8 c12 c13 c14 c15 c16 c17 r1 r2 -- rev. 0 cut out area v gg v gg v dd v dd figure 16. a2t18s260--12sr3 test ci rcuit component l ayout ? 1930?1995 mhz table 9. a2t18s260--12sr3 test circuit c omponent designations and values ? 1930?1995 mhz part description part number manufacturer c1, c5, c6, c13, c14 15 pf chip capacitors atc600f150jt500xt atc c2 0.6 pf chip capacitor atc600f0r6bt500xt atc c3 0.7 pf chip capacitor atc600f0r7bt500xt atc c4 6.8 pf chip capacitor atc600f6r8bt500xt atc c7, c8, c9, c10, c11, c12 10 ? f chip capacitors c5750x7s2a106m230kb tdk c15 0.1 pf chip capacitor atc600f0r1bt500xt atc c16, c17 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp r1, r2 6.8 ? , 1/4 w chip resistors crcw12066r80fkea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.66 d65232 mtl
a2t18s260--12sr3 11 rf device data nxp semiconductors typical characteris tics ? 1930?1995 mhz irl, input return loss (db) ?15 ?3 ?6 ?9 ?12 ?18 1880 f, frequency (mhz) figure 17. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. 18.6 20.6 20.4 20.2 ?37 36 34 32 30 ?32 ?33 ?34 ?35 g ps , power gain (db) 20 19.8 19.6 19.4 19.2 19 18.8 1900 1920 1940 1960 1980 2000 2020 28 ?36 acpr (dbc) v dd =28vdc,p out =50w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth g ps input signal par = 9.9 db @ 0.01% probabilit y on ccdf 1 p out , output power (watts) avg. figure 18. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 16 22 0 60 50 40 30 20 g ps , power gain (db) 21 20 10 300 10 ?60 acpr (dbc) 19 18 17 0 ?30 ?40 ?50 g ps 1995 mhz figure 19. broadband frequency response 6 24 f, frequency (mhz) 18 15 12 gain (db) 21 9 1500 1650 1800 1950 2100 2250 2400 2550 2700 v dd =28vdc p in =0dbm i dq = 1400 ma ? d , drain efficiency (%) ? d , drain efficiency (%) 2040 parc (db) ?3 ?1.8 ?2.1 ?2.4 ?2.7 ?3.3 irl ? d acpr 100 v dd =28vdc,i dq = 1400 ma single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf ? d acpr 1960 mhz 1930 mhz 1960 mhz 1995 mhz 1930 mhz 1995 mhz 1960 mhz 1930 mhz ?20 10 5 0 ?5 ?10 irl (db) ?15 irl parc gain
12 rf device data nxp semiconductors a2t18s260--12sr3 table 10. load pull performance ? maximum power tuning v dd =28vdc,i dq = 1381 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.23 ? j3.67 1.79 + j3.26 1.19 ? j2.45 19.2 54.7 293 57.0 ?15 1960 3.09 ? j3.76 2.52 + j3.62 1.22 ? j2.50 19.4 54.5 283 55.4 ?15 1995 4.33 ? j3.32 4.02 + j3.82 1.23 ? j2.52 19.6 54.6 291 57.2 ?14 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.23 ? j3.67 1.80 + j3.44 1.26 ? j2.62 17.0 55.5 352 58.8 ?20 1960 3.09 ? j3.76 2.61 + j3.86 1.31 ? j2.67 17.2 55.3 339 57.0 ?20 1995 4.33 ? j3.32 4.29 + j4.05 1.35 ? j2.70 17.4 55.4 350 59.2 ?19 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 11. load pull performance ? maximum efficiency tuning v dd =28vdc,i dq = 1381 ma, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.23 ? j3.67 1.92 + j3.39 1.68 ? j1.31 21.6 53.1 206 66.7 ?21 1960 3.09 ? j3.76 2.77 + j3.69 1.66 ? j1.25 21.9 52.8 189 64.7 ?21 1995 4.33 ? j3.32 4.40 + j3.80 1.48 ? j1.47 21.8 53.3 215 67.0 ?20 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.23 ? j3.67 1.86 + j3.53 1.67 ? j1.51 19.4 54.2 261 69.7 ?27 1960 3.09 ? j3.76 2.85 + j3.93 1.66 ? j1.28 19.9 53.6 226 67.6 ?29 1995 4.33 ? j3.32 4.59 + j4.05 1.52 ? j1.62 19.6 54.3 269 70.2 ?27 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
a2t18s260--12sr3 13 rf device data nxp semiconductors p1db -- typical load pull contours ? 1960 mhz ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) imaginary ( ? ) ?3 1 ?1 imaginary ( ? ) 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 figure 20. p1db load pull output power contours (dbm) real ( ? ) 3.5 ?0.5 0 imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 21. p1db load pull efficiency contours (%) real ( ? ) figure 22. p1db load pull gain contours (db) real ( ? ) figure 23. p1db load pull am/pm contours ( ? ) real ( ? ) 0.5 45 4.5 ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 p e 53.5 53 52 52.5 50.5 54 51 51.5 p e 64 58 50 52 56 54 62 60 48 p e 19 20 23 19.5 20.5 21.5 21 22 22.5 p e ?16 ?14 ?18 ?20 ?28 ?26 ?22 ?24
14 rf device data nxp semiconductors a2t18s260--12sr3 p3db ? typical load pull contours ? 1960 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 24. p3db load pull output power contours (dbm) real ( ? ) figure 25. p3db load pull efficiency contours (%) real ( ? ) figure 26. p3db load pull gain contours (db) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) real ( ? ) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) ?3 1 ?1 1 1.5 2 3 ?1.5 ?2 2.5 ?2.5 0.5 3.5 ?0.5 0 0.5 45 4.5 imaginary ( ? ) p e 53.5 53 52.5 54 52 51.5 54.5 55 e p 64 52 60 66 58 62 54 56 e p 19.5 17.5 18.5 19 18 20 20.5 21 figure 27. p3db load pull am/pm contours ( ? ) p e ?32 ?30 ?28 ?26 ?24 ?22 ?20 ?18 real ( ? )
a2t18s260--12sr3 15 rf device data nxp semiconductors package dimensions
16 rf device data nxp semiconductors a2t18s260--12sr3
a2t18s260--12sr3 17 rf device data nxp semiconductors product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 sept. 2016 ? initial release of data sheet
18 rf device data nxp semiconductors a2t18s260--12sr3 how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, repr esentation, or guarantee r egarding the sui tability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo, freescale, the freescale logo, and airfast are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2016 nxp b.v. document number: a2t18s260--12s rev. 0, 9/2016

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